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Results 1 - 2 from 2 for molecular beam epitaxy in 0.073 sec.
30 EDS Members Elected to the IEEE Grade of Fellow Effective 1 January
2002
Urbana, IL, USA, For contributions to semiconductor heterostructure materials and devices using molecular beam epitaxy Bijan Davari, IBM, Hopewell Junction, NY, USA, For contributions to high performance ... , University of California, San Diego, La Jolla, CA, USA, For contributions to molecular beam epitaxy of novel III-V semiconductors Jan Van der Spiegel, University of Pennsylvania, Philadelphia, ...
ieee.org
Chemical & Materials Sciences - Fundamental & Computational Sciences Directorate
More International Board of Physicists Commends Molecular Beam Epitaxy Article Top editors at the Institute of Physics selected the review article written by Pacific ...
pnl.gov
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